- Contract win reflects HOCHTIEF’s leading global position in the provision of critical data center infrastructure
- Strategic focus on data center opportunities in Europe
HOCHTIEF has been awarded a contract by NTT Global Data Centers to build a data center in Berlin. The contract, valued at several hundred million euros, covers the construction of a facility with a capacity of 36 MW.
Delivered by an integrated team of HOCHTIEF Infrastructure and Turner (through its subsidiary Dornan), construction is scheduled to begin in summer 2026, with the first data halls set to be handed over in 2028. Full completion is targeted for 2029.
“This project reflects our continued focus on digital infrastructure and strengthens HOCHTIEF’s leading position in this market,” said HOCHTIEF Chief Executive Officer Juan Santamaría. “Germany is experiencing strong, sustained demand for data center capacity and by combining the capabilities of HOCHTIEF Infrastructure and Dornan, we are well placed to support the continued expansion of the digital infrastructure that underpins economic growth and innovation.”
“This is an important project for us in Germany,” said HOCHTIEF Infrastructure Chief Executive Officer Peter Hingott. “We developed it locally and will deliver it with an integrated team, drawing on HOCHTIEF Infrastructure’s experience in complex construction and our strong understanding of the market.”
“We are pleased to support this project alongside HOCHTIEF Infrastructure,” said Micheál O’Connor, Group Managing Director of Dornan. “The Dornan team brings specialist mechanical and electrical expertise that is critical to the successful delivery of data centers of this scale.”
The project involves the construction of a three-story 36 MW data center and a four-story office building. The scope includes all electrical and mechanical engineering work and the implementation of advanced safety and management systems.
In 2025, HOCHTIEF secured EUR 16.8 billion of new data center orders, with the segment representing 21 percent of backlog.
